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Quantum Interference Effect on Exciton Transport in Monolayer Semiconductors
1Ioffe Institute, 194021 St. Petersburg, Russia.
Physical Review Letters
|May 9, 2020
Summary
Weak localization decreases exciton diffusion in atomically thin transition metal dichalcogenides due to constructive interference. This quantum effect is significant in monolayer and bilayer materials, especially at higher temperatures.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Mechanics
Background:
- Atomically thin transition metal dichalcogenides exhibit unique excitonic properties.
- Exciton diffusion is crucial for optoelectronic device performance.
- Weak localization is a quantum interference phenomenon affecting charge carriers.
Purpose of the Study:
- To theoretically investigate weak localization of excitons.
- To quantify the impact of quantum interference on exciton diffusion coefficient.
- To analyze the role of temperature and scattering mechanisms.
Main Methods:
- Theoretical modeling of weak localization.
- Calculation of interference contribution to exciton diffusion.
- Analysis of scattering by acoustic phonons and static disorder.
Main Results:
- Constructive interference of excitonic de Broglie waves reduces exciton diffusion.
- Quantum interference becomes more significant with increasing temperature for acoustic phonon scattering.
- The quantum contribution to diffusion is considerable in monolayer and bilayer transition metal dichalcogenides.
Conclusions:
- Weak localization significantly impacts exciton dynamics in 2D materials.
- Temperature-dependent quantum interference is a key factor in exciton transport.
- Understanding these effects is vital for designing advanced optoelectronic devices.
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