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Multi-heterojunction InAs/GaSb nano-ridges directly grown on (001) Si
Zhao Yan1, Yu Han1, Kei May Lau1
1Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China.
Abstract:
We report on multi-stacked InAs/GaSb nano-ridges directly grown on (001) patterned Si substrates by metal-organic chemical vapor deposition (MOCVD). Uniform GaSb and InAs nano-ridges were demonstrated with optimized growth parameters. By adjusting the switching sequences, we also obtained defect-free InAs/GaSb and GaSb/InAs interfaces. Based on these fine-tuned growth conditions, multi-stacked InAs/GaSb nano-ridges were developed and characterized. The nano-ridges showed uniform morphology from scanning electron microscopy (SEM), and no observable crystalline defects were detected at the hetero-interfaces by transmission electron microscopy (TEM). These InAs/GaSb nano-ridges show great potential for applications in nano-scale tunneling devices and long wavelength light emitters and detectors. The demonstrated growth techniques provide helpful insights for the growth process control of 6.1 Å family compound semiconductors directly on Si by MOCVD.
