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Related Concept Videos

Types Of Superconductors01:28

Types Of Superconductors

1.5K
A superconductor is a substance that offers zero resistance to the electric current when it drops below a critical temperature. Zero resistance is not the only interesting phenomenon as materials reach their transition temperatures. A second effect is the exclusion of magnetic fields. This is known as the Meissner effect. A light, permanent magnet placed over a superconducting sample will levitate in a stable position above the superconductor. High-speed trains that levitate on strong...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
477
P-N junction01:11

P-N junction

1.0K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.0K
Superconductor01:24

Superconductor

1.6K
A substance that reaches superconductivity, a state in which magnetic fields cannot penetrate, and there is no electrical resistance, is referred to as a superconductor. In 1911, Heike Kamerlingh Onnes of Leiden University, a Dutch physicist, observed a relation between the temperature and the resistance of the element mercury. The mercury sample was then cooled in liquid helium to study the linear dependence of resistance on temperature. It was observed that, as the temperature decreased, the...
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Biasing of P-N Junction01:16

Biasing of P-N Junction

1.6K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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Highly Transparent Gatable Superconducting Shadow Junctions.

Sabbir A Khan1,2, Charalampos Lampadaris1,2, Ajuan Cui1,2

  • 1Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark.

ACS Nano
|May 13, 2020
PubMed
Summary
This summary is machine-generated.

We developed high-quality, gate-tunable semiconductor-superconductor junctions using in situ shadowed techniques. Sharpest edges maximize junction transparency, crucial for advancing superconducting quantum devices and qubits.

Keywords:
Majorana bound statesballistic transportquantum computingsemiconductor−superconductor nanowiresshadow junctionstopological materials

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Area of Science:

  • Quantum computing materials science
  • Solid-state physics and nanotechnology

Background:

  • Gate-tunable junctions are essential for hybrid semiconductor-superconductor quantum devices.
  • Junction transparency critically impacts qubit performance in gatemon and topological qubits.

Purpose of the Study:

  • To investigate fabrication parameters, morphology, and transport properties of semiconductor-superconductor junctions.
  • To compare in situ shadowed junctions with traditional etched junctions.

Main Methods:

  • Single-step molecular beam epitaxy growth of InAs, InSb, and InAsSb nanowires with Al, Sn, and Pb superconductors.
  • In situ shadow masking for junction fabrication.
  • Characterization of junction morphology and electronic transport properties.

Main Results:

  • In situ shadowed junctions exhibit significantly higher quality than etched junctions.
  • Maximum junction transparency is achieved with the sharpest shadow edges for all semiconductors.
  • Critical supercurrent measurements show exceptionally high IcRN values, approaching the theoretical KO-2 limit.

Conclusions:

  • In situ shadowed junctions offer a superior pathway for fabricating high-quality semiconductor-superconductor interfaces.
  • Optimizing shadow edge sharpness is key to maximizing junction transparency.
  • This approach provides a promising route toward reliable gate-tunable superconducting qubits.