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Fabrication of Microbolometer Arrays Based on Polymorphous Silicon-Germanium
Ricardo Jimenez1, Mario Moreno1, Alfonso Torres1
1Electronics Group, National Institute of Astrophysics, Optics and Electronics, Puebla 72840, Mexico.
Sensors (Basel, Switzerland)
|May 14, 2020
Summary
Arrays of infrared sensors were developed using a novel hydrogenated polymorphous silicon-germanium alloy (pm-SiGe:H). These microbolometers demonstrate excellent performance and stability for infrared detection applications.
Area of Science:
- Materials Science and Engineering
- Semiconductor Physics
- Infrared Technology
Background:
- Polymorphous semiconductors feature nanocrystals within an amorphous matrix.
- Hydrogenated polymorphous silicon-germanium (pm-SiGe:H) alloys are explored for their unique electronic properties.
Purpose of the Study:
- To develop and characterize infrared sensor arrays (microbolometers) using a pm-SiGe:H alloy.
- To evaluate the performance and stability of these microbolometers for infrared radiation detection.
Main Methods:
- Fabrication of microbolometers using plasma-enhanced chemical vapor deposition (PECVD) at 200 °C.
- Electrical characterization of a 19x20 microbolometer array.
- Measurement of temperature coefficient of resistance (TCR), conductivity, voltage responsivity, detectivity, and noise equivalent power.
Main Results:
- The pm-SiGe:H alloy exhibited a high TCR of 4.08%/K and conductivity of 1.5 × 10-5 S∙cm-1.
- Achieved voltage responsivity of 4 × 104 V/W and detectivity of 2 × 107 cm∙Hz1/2/W.
- Demonstrated excellent mechanical stability and response to infrared radiation at room temperature.
Conclusions:
- The developed pm-SiGe:H microbolometer arrays show promising performance for infrared sensing.
- The material's properties and device stability make it suitable for advanced infrared detector applications.
