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Determining In-Plane Carrier Diffusion in Two-Dimensional Perovskite Using Local Time-Resolved Photoluminescence
Chunhua Zhou1, Weijian Chen1, Shuang Yang2
1Centre for Translational Atomaterials, Faculty of Science, Engineering and Technology, Swinburne University of Technology, John Street, Hawthorn, Melbourne, Victoria 3122, Australia.
ACS Applied Materials & Interfaces
|May 14, 2020
Summary
Researchers developed a new method to measure photogenerated carrier diffusion length in nanoplatelets. This technique yields a diffusion length of 1.82 μm for perovskite nanoplatelets, crucial for optoelectronics.
Area of Science:
- Materials Science
- Semiconductor Physics
- Nanotechnology
Background:
- Carrier diffusion length is vital for semiconductor optoelectronic device performance.
- Measuring diffusion length in thin, anisotropic layered nanoplatelets is challenging.
Purpose of the Study:
- To introduce a novel method for determining the in-plane diffusion length of photogenerated carriers in layered nanoplatelets.
- To validate the method using exfoliated (BA)2PbI4 perovskite nanoplatelets.
Main Methods:
- Utilizing local time-resolved photoluminescence spectroscopy.
- Employing high detection sensitivity suitable for weakly luminescent or laser-sensitive materials.
Main Results:
- Successfully determined the in-plane carrier diffusion length.
- Obtained an in-plane diffusion length of 1.82 μm for (BA)2PbI4 perovskite nanoplatelets.
Conclusions:
- The developed method accurately measures in-plane diffusion length in layered nanoplatelets.
- This technique is extendable to various layered materials, aiding 2D and 3D semiconductor device development.
