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Lateral bipolar junction transistor on a silicon photonics platform.

Aashu Jha, Thomas Ferreira de Lima, Hooman Saeidi

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    Researchers developed a novel lateral bipolar junction transistor (BJT) on a silicon photonics platform, achieving a high transimpedance for improved electronic-photonic integration. This advancement enhances signal processing efficiency in integrated photonic systems.

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    Area of Science:

    • Materials Science
    • Electrical Engineering
    • Photonics

    Background:

    • Large-scale photonic integration requires seamless integration of active electronics with photonic systems.
    • Monolithic integration offers improved efficiency and electronic processing capabilities compared to heterogeneous approaches.

    Purpose of the Study:

    • To report the development of a lateral bipolar junction transistor (BJT) compatible with commercial silicon photonics foundry processes.
    • To evaluate the performance of the fabricated BJT in terms of DC and AC gain, and transimpedance.

    Main Methods:

    • Fabrication of a lateral bipolar junction transistor (BJT) using a standard silicon photonics foundry process.
    • Characterization of the BJT's DC current gain in a Darlington configuration.
    • Measurement of S-parameters to determine the AC gain and transimpedance at various frequencies.

    Main Results:

    • Achieved a DC current gain of 10 in a Darlington configuration.
    • Demonstrated an available AC gain of at least 3dB for signal frequencies up to 1.1 GHz.
    • Exhibited a transimpedance of 3.2mS/μm for the single BJT, significantly outperforming existing literature by approximately 70 times.

    Conclusions:

    • The developed lateral BJT is suitable for monolithic integration into silicon photonics platforms.
    • The high transimpedance and operational frequency of the BJT pave the way for more efficient electronic-photonic integrated circuits.
    • This work represents a significant advancement in enabling high-performance electronic functionalities within silicon photonic systems.