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Updated: Dec 21, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Dynamic band alignment modulation of ultrathin WOx/ZnO stack for high on/off ratio field-effect switching
Ho-In Lee1, Jinseon Park, Yun Ji Kim
1Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Cheomdangwagi-ro 123, Buk-gu, Gwangju 61005, South Korea. bhl@gist.ac.kr.
Abstract:
A two-dimensional (2D) WOx/ZnO stack reveals a unique carrier transport behavior, which can be utilized as a novel device element to achieve a very high on/off ratio (>106) and an off current density lower than 1 nA cm-2. These unique behaviors are explained by a dynamic band alignment between WOx and ZnO, which can be actively modulated by a gate bias. The performance of FET utilizing the WOx/ZnO stack is comparable to those of other 2D heterojunction devices; however, it has a unique benefit in terms of process integration because of very low temperature process capability (T < 110 °C). The high on/off switching with extremely low off current density utilizing the dynamic band alignment modulation at the WOx/ZnO stack can be a very useful element for future device applications, especially in monolithic 3D integration or flexible electronics.
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