Binary Addition in Resistance Switching Memory Array by Sensing Majority
Related Experiment Video
Updated: Dec 21, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
1Chair of Computer Science 3-Computer Architecture, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 91058 Erlangen, Germany.
Abstract:
The flow of data between processing and memory units in contemporary computing systems is their main performance and energy-efficiency bottleneck, often referred to as the 'von Neumann bottleneck' or 'memory wall'. Emerging resistance switching memories (memristors) show promising signs to overcome the 'memory wall' by enabling computation in the memory array. Majority logic is a type of Boolean logic, and in many nanotechnologies, it has been found to be an efficient logic primitive. In this paper, a technique is proposed to implement a majority gate in a memory array. The majority gate is realised in an energy-efficient manner as a memory R E A D operation. The proposed logic family disintegrates arithmetic operations to majority and NOT operations which are implemented as memory R E A D and W R I T E operations. A 1-bit full adder can be implemented in 6 steps (memory cycles) in a 1T-1R array, which is faster than I M P L Y , N A N D , N O R and other similar logic primitives.
Related Concept Videos
Combination Of Resistors
Equivalent Resistance
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
Resistors In Parallel
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Resistance and Conductance
Various factors impact the resistance of a conductor. Spiraling in stranded conductors increases their...

