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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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150-200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers.

Feng-Tso Chien1, Zhi-Zhe Wang1, Cheng-Li Lin1

  • 1Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan.

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|May 21, 2020
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Summary

Researchers developed advanced epitaxial layer structures for split-gate trench (SGT) Power MOSFETs. A triple-epitaxial layer design significantly reduces specific on-resistance (Ron,sp) while maintaining high breakdown voltage.

Keywords:
multiple epitaxial layersspecific on-resistancesplit-gate trench power MOSFET

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Area of Science:

  • Semiconductor device physics
  • Power electronics engineering

Background:

  • Split-gate trench (SGT) Power MOSFETs are crucial for efficient power management.
  • Reducing specific on-resistance (Ron,sp) is key to improving device performance.
  • Existing single and double epitaxial layer designs have limitations at higher voltages.

Purpose of the Study:

  • To investigate and optimize epitaxial layer structures for 150 V and 200 V SGT Power MOSFETs.
  • To reduce the specific on-resistance (Ron,sp) without compromising breakdown voltage.
  • To compare the performance of single, double, and triple epitaxial layer designs.

Main Methods:

  • Utilized Integrated System Engineering-Technology Computer-Aided Design (ISE-TCAD) simulations.
  • Designed and analyzed SGT Power MOSFETs with varying epitaxial layer configurations (single, double, triple).
  • Modulated the thickness and resistivity of each epitaxial layer to optimize device characteristics.

Main Results:

  • A double-epitaxial layer design offers more flexibility in reducing Ron,sp compared to single-epitaxial layers.
  • For voltages over 100 V, the on-state resistance (Ron) of double-epitaxial devices may not meet expectations.
  • Simulated triple-epitaxial layer devices achieved a significant reduction in Ron,sp: 62% and 18.3% of double- and single-epitaxial structures, respectively.

Conclusions:

  • Triple-epitaxial layer structures are highly effective in minimizing Ron,sp for SGT Power MOSFETs.
  • This advanced design approach allows for lower on-state resistance without sacrificing breakdown voltage.
  • The findings provide a pathway for developing next-generation, high-performance power MOSFETs.