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Mott gap collapse in lightly hole-doped Sr2-xKxIrO4
J N Nelson1, C T Parzyck1, B D Faeth1
1Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York, 14853, USA.
Abstract:
The evolution of Sr2IrO4 upon carrier doping has been a subject of intense interest, due to its similarities to the parent cuprates, yet the intrinsic behaviour of Sr2IrO4 upon hole doping remains enigmatic. Here, we synthesize and investigate hole-doped Sr2-xKxIrO4 utilizing a combination of reactive oxide molecular-beam epitaxy, substitutional diffusion and in-situ angle-resolved photoemission spectroscopy. Upon hole doping, we observe the formation of a coherent, two-band Fermi surface, consisting of both hole pockets centred at (π, 0) and electron pockets centred at (π/2, π/2). In particular, the strong similarities between the Fermi surface topology and quasiparticle band structure of hole- and electron-doped Sr2IrO4 are striking given the different internal structure of doped electrons versus holes.
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