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Micro-drive Array for Chronic in vivo Recording: Drive Fabrication
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Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices.

Seung-Ho Lim1, Ki-Woong Park2

  • 1Division of Computer and Electronic Systems Engineering, Hankuk University of Foreign Studies, Yongin 17035, Korea.

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Summary
This summary is machine-generated.

This study introduces lossless data compression to improve NAND flash memory reliability. The new method enhances error recovery, significantly reducing uncorrectable bit error rates in storage devices.

Keywords:
NAND flash memoryP/E cycleRAID scatteringadaptive ECCcompressionparitystripe log

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Area of Science:

  • Computer Engineering
  • Data Storage Technologies

Background:

  • NAND flash memory is prone to data errors from memory cells.
  • Error-correction codes (ECCs) mitigate these errors but have limitations with increasing error rates.
  • Enhanced reliability for flash storage devices necessitates complementary error recovery methods.

Purpose of the Study:

  • To propose a novel scheme using lossless data compression to boost error recovery in NAND flash storage.
  • To enhance the error resilience of flash memory, both within and across data pages.
  • To improve the uncorrectable bit error rate (UBER) beyond existing systems.

Main Methods:

  • Implemented a scheme integrating lossless data compression with flash memory error correction.
  • Utilized an adaptive ECC module for encoding compressed data within a page, reducing the code rate.
  • Strategically placed compressed data within pages to enable skipping non-essential pages during recovery.

Main Results:

  • The proposed scheme demonstrates improved error recovery capabilities for NAND flash memory.
  • Adaptive ECC on compressed data within pages leads to a reduced code rate.
  • Page-level data placement allows for efficient skipping of pages during error recovery, enhancing overall system performance.

Conclusions:

  • Lossless data compression offers a viable complementary approach to ECC for NAND flash memory reliability.
  • The proposed scheme effectively enhances error recovery, improving UBER performance.
  • This method provides a robust solution for increasing the dependability of flash storage devices.