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Single-Step Formation of a Low Work Function Cathode Interlayer and n-type Bulk Doping from Semiconducting
Keli Fabiana Seidel1,2, Dominique Lungwitz2, Andreas Opitz2
1Physics Department, Universidade Tecnológica Federal do Paraná, 80230-901 Curitiba, Brazil.
Polyethylenimine (PEI) interlayers significantly reduce organic electronic device resistance by forming at interfaces and slightly doping the semiconductor. This one-step process impacts both bulk and interfacial properties.
Area of Science:
- Organic electronics
- Materials science
- Interface engineering
Background:
- Polyethylenimine (PEI) is used as a thin interlayer in organic electronics to minimize Ohmic losses.
- PEI interlayers can form spontaneously via vertical phase separation in blended polymer solutions.
- The distinction between interfacial and bulk effects of PEI in organic semiconductors requires clarification.
Purpose of the Study:
- To investigate the interfacial and bulk effects of PEI in blended thin films with P(NDI2OD-T2) semiconductor.
- To determine the impact of PEI interlayers on electron injection barriers and contact resistance.
- To assess the extent of bulk doping and its influence on conductivity and carrier mobility.
Main Methods:
- Spin-coating of blended solutions of PEI and P(NDI2OD-T2) on indium tin oxide (ITO).
- Analysis of vertical phase separation using film morphology.
- Measurement of electron injection barriers, contact resistance, optical absorption, and electron paramagnetic resonance (EPR).
Main Results:
- Vertical phase separation leads to PEI accumulation at the film's top and bottom, sandwiching the semiconductor.
- PEI interlayers reduce the electron injection barrier, decreasing contact resistance by five orders of magnitude.
- EPR confirms low-level doping and increased carrier density, enhancing conductivity by four orders of magnitude.
Conclusions:
- Both interfacial and bulk effects of PEI are significant in blended semiconductor polymer/PEI films.
- The facile one-step procedure for PEI interlayers requires careful consideration due to simultaneous bulk modification.
- Unnoticed doping effects in the bulk semiconductor polymer can occur, necessitating thorough examination.
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