Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.7K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
1.7K
Electrostatic Boundary Conditions01:16

Electrostatic Boundary Conditions

854
Consider an external electric field propagating through a homogeneous medium. When the electric field crosses the surface boundary of the medium, it undergoes a discontinuity. The electric field can be resolved into normal and tangential components. The amount by which the field changes at any boundary is given by the difference between the field components above and below the surface boundary.
The surface integral of an electric field is given by Gauss's law in integral form and is related to...
854

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Gate-Tunable Magnetoresistance in Antiferromagnetic van der Waals FePS<sub>3</sub> Transistors.

Nano letters·2026
Same author

The Role of Defect Geometry in Localized Emission from Monolayer Tungsten Dichalcogenides.

ACS nano·2026
Same author

Split-Gate Memtransistors for Energy-Efficient Adaptive Reinforcement Learning.

ACS nano·2026
Same author

Efficient Second-Harmonic Generation from Molecular Monolayers.

ACS nano·2026
Same author

Oxygen Distribution and Segregation at Grain Boundaries in Nb and Ta-Encapsulated Nb Thin Films for Superconducting Qubits.

ACS nano·2026
Same author

Robust Interpretation of Electrochemical Impedance Spectra Using Numerical Complex Analysis.

ACS measurement science au·2026
Same journal

Nongenetic <i>in Vivo</i> Bimodal Neuromodulation via Photothermal Gold Nanorods and a Multifunctional Fiber Neural Probe.

ACS nano·2026
Same journal

Electric-Field-Driven Ferredoxin 1-Independent Cuproptosis Induction Overcomes Therapy-Induced Resistance in Glioblastoma.

ACS nano·2026
Same journal

Connecting and Engaging.

ACS nano·2026
Same journal

Efficient Photocatalytic Methane Conversion to Liquid Oxygenates by Constructing Charge-Directed Transfer Pathways.

ACS nano·2026
Same journal

Mechanochemically Coupled Multidimensional Modulation of Calcium Overload.

ACS nano·2026
Same journal

Electrical Control and High-Bias Enhancement of Magnetoresistance in van der Waals Antiferromagnetic Spin-Filter Tunnel Field-Effect Transistor.

ACS nano·2026
See all related articles

Related Experiment Video

Updated: Dec 20, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.9K

Emerging Opportunities for Electrostatic Control in Atomically Thin Devices.

Megan E Beck1, Mark C Hersam1,2,3

  • 1Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.

ACS Nano
|May 29, 2020
PubMed
Summary
This summary is machine-generated.

Atomically thin materials enable novel electrostatic control beyond traditional field-effect transistors (FETs). This opens new avenues for advanced logic, memory, and optoelectronic devices by creating spatial charge inhomogeneity.

Keywords:
anti-ambipolarcharge transportelectrostaticsneuromorphicnonvolatile memoryphotodiodestransistorstwo-dimensional materialsvan der Waals heterojunctions

More Related Videos

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
08:49

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

Published on: December 4, 2014

14.7K
Atomically Traceable Nanostructure Fabrication
12:35

Atomically Traceable Nanostructure Fabrication

Published on: July 17, 2015

9.1K

Related Experiment Videos

Last Updated: Dec 20, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.9K
Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
08:49

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

Published on: December 4, 2014

14.7K
Atomically Traceable Nanostructure Fabrication
12:35

Atomically Traceable Nanostructure Fabrication

Published on: July 17, 2015

9.1K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Field-effect transistors (FETs) rely on electrostatic control of charge carriers, crucial for modern electronics.
  • Miniaturization to the nanometer scale has driven complex geometries like FinFETs.
  • Atomically thin materials present unique electrostatic challenges and opportunities due to their dielectric screening properties.

Purpose of the Study:

  • To review recent advancements in unconventional electrostatic modulation in atomically thin materials.
  • To explore how unique properties of 2D materials can be leveraged for advanced device functionalities.
  • To highlight the potential of these materials in next-generation electronic and optoelectronic technologies.

Main Methods:

  • Discussion of recent experimental demonstrations of electrostatic modulation in 2D materials.
  • Analysis of the interplay between low dielectric screening and other 2D material properties.
  • Exploration of device geometries and material combinations enabling novel electrostatic effects.

Main Results:

  • Atomically thin materials exhibit dielectric screening lengths exceeding physical dimensions, enabling new modulation mechanisms.
  • Combining low screening with quantum confinement and mechanical flexibility allows for high electrostatic spatial inhomogeneity.
  • These effects lead to tunable properties suitable for diverse applications.

Conclusions:

  • Unconventional electrostatic control in atomically thin materials offers significant advantages over traditional FETs.
  • These materials enable the development of advanced logic, memory, neuromorphic, and optoelectronic devices.
  • The unique properties of 2D materials pave the way for next-generation electronic technologies.