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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
Schottky-Contacted Nanowire Sensors.
Jianping Meng1, Zhou Li1,2,3
1CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China.
Schottky-contacted nanowire sensors offer high performance for Internet-of-Things applications. Further advancements in defect engineering and surface modification can enhance their capabilities for diverse sensing needs.
Area of Science:
- Materials Science
- Nanotechnology
- Sensor Technology
Background:
- The Internet-of-Things (IoT) demands advanced sensor technology.
- Schottky-contacted nanowire sensors are recognized for high sensitivity and rapid response.
Purpose of the Study:
- To review the progress of Schottky-contacted nanowire sensors.
- To discuss their applications and potential improvements.
Main Methods:
- Review of existing literature on Schottky-contacted nanowire sensors.
- Analysis of various nanowire types and their applications.
- Discussion of enhancement strategies like defect engineering and surface modification.
Main Results:
- Schottky-contacted nanowire sensors show promise in bio/chemical, gas, photo, and strain sensing.
- Methods like defect engineering, surface modification, and utilizing piezotronic/piezophototronic effects can improve performance.
Conclusions:
- Schottky-contacted nanowire sensors have excellent performance but require further development.
- Challenges include stability, selectivity, ultrafast response, multifunctionality, flexibility, energy supply, and sustainability.
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