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Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory

Kwan-Jun Heo1,2, Han-Sang Kim1, Jae-Yun Lee1

  • 1College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, 28644, Korea.

Scientific Reports
|June 11, 2020
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