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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
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Spin-Gapless Semiconductors.

Zengji Yue1,2, Zhi Li1,2, Lina Sang1,2

  • 1Institute for Superconducting and Electronic Materials (ISEM), Australian Institute of Innovative Materials (AIIM), University of Wollongong, North Wollongong, NSW, 2522, Australia.

Small (Weinheim an Der Bergstrasse, Germany)
|June 13, 2020
PubMed
Summary
This summary is machine-generated.

Spin-gapless semiconductors (SGSs) are novel materials with unique spin properties, bridging zero-gap and half-metal materials. Research focuses on Dirac-type SGSs for advanced spintronics and low-energy electronics.

Keywords:
Dirac linear dispersionHeusler compoundsparabolic energy dispersionsspin gapless semiconductorszero gap materials

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Spin-gapless semiconductors (SGSs) are a novel class of materials exhibiting fully spin-polarized electrons and holes.
  • SGSs possess unique band structures with either Dirac linear or parabolic dispersion, bridging zero-gap materials and half-metals.

Purpose of the Study:

  • To review Dirac and parabolic types of SGSs in various material systems.
  • To outline the concepts of SGSs, their novel spin and charge states, and potential applications.
  • To highlight the growing interest in discovering Dirac-type SGSs for spintronics.

Main Methods:

  • Theoretical prediction using density functional theory (DFT) for novel SGS candidates.
  • Experimental demonstration of some parabolic SGS materials.
  • Review of existing literature on SGS materials and their properties.

Main Results:

  • Numerous Dirac and parabolic type SGSs have been theoretically predicted.
  • Some parabolic SGSs have been experimentally verified.
  • Dirac-type SGSs offer a platform for massless, fully spin-polarized spintronics and dissipationless edge states.

Conclusions:

  • SGSs, particularly Dirac-type, hold significant potential for next-generation spintronic devices.
  • These materials promise high-speed, low-energy consumption in spintronics, electronics, and optoelectronics.
  • Continued research is crucial for realizing the full potential of SGSs in advanced technological applications.