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Asymmetric Pseudocapacitors Based on Interfacial Engineering of Vanadium Nitride Hybrids

Hailan Su1, Tuzhi Xiong1, Qirong Tan1

  • 1College of Materials Science and Engineering, Hunan University, Changsha 410082, China.

Nanomaterials (Basel, Switzerland)
|June 14, 2020
PubMed

Keywords:
MoS2 nanosheetsVN nanowiresasymmetric pseudocapacitorphase boundarypseudocapacitive charge storage

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