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Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features
Feng-Shou Yang1,2, Mengjiao Li3, Mu-Pai Lee1,4
1Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan.
Nature Communications
|June 14, 2020
Summary
This study presents an InSe field-effect transistor acting as an artificial synapse. Its native oxide layer enables efficient charge trapping for nonvolatile memory and neuromorphic computing applications.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics
Background:
- Modulating electronic properties of semiconductors via oxidation is key for novel applications.
- Native oxidation in environmentally sensitive materials offers unique device functionalities.
Purpose of the Study:
- To demonstrate an Indium Selenide (InSe) field-effect transistor as an artificial synapse.
- To leverage native oxidation for enhanced charge trapping and nonvolatile memory characteristics.
Main Methods:
- Fabrication of an InSe field-effect transistor with a native InOₓ layer.
- Characterization of charge trapping/releasing dynamics under ambient conditions.
- Implementation of the device as an artificial synapse for neuromorphic computing.
Main Results:
- Confirmation of a thin InOₓ layer acting as an effective charge trapping layer.
- Observation of uniform charge trapping and releasing processes.
- Demonstration of nonvolatile memory characteristics with flexible programming/erasing.
- Emulation of essential synaptic functions in an InSe-based artificial synapse.
Conclusions:
- The oxide-decorated InSe device exhibits promising nonvolatile memory capabilities.
- The InSe artificial synapse serves as a paradigm for van der Waals materials in neuromorphic computation.
- This approach offers a pathway for developing ultra-sensitive, electric-modulated neuromorphic architectures.
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