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Related Concept Videos

MOSFET Amplifiers01:17

MOSFET Amplifiers

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The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
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Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
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Biasing of FET01:22

Biasing of FET

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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
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Characteristics of MOSFET01:17

Characteristics of MOSFET

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

474
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor.

Stefan Ilić1, Aleksandar Jevtić1, Srboljub Stanković2

  • 1Applied Physics Laboratory, Faculty of Electronic Engineering, University of Niš, 18000 Niš, Serbia.

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Summary

Electrically Programmable Analog Devices (EPADs) show promise as gamma radiation sensors. Zero-biased configurations offer superior sensitivity and minimal fading, outperforming static-biased methods.

Keywords:
ZTCfloating-gate MOS transistorionizing radiation sensorsemiconductor dosimetertransistor dynamic biasing

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Area of Science:

  • Solid-state physics
  • Radiation detection instrumentation

Background:

  • Electrically Programmable Analog Devices (EPADs) are versatile semiconductor components.
  • Gamma radiation detection requires sensitive and stable sensor technologies.

Purpose of the Study:

  • To investigate the feasibility of using EPADs as gamma radiation sensors.
  • To optimize EPAD performance for radiation detection applications.

Main Methods:

  • Characterization of zero-biased EPADs for radiation sensitivity and fading.
  • Implementation and evaluation of dynamic control gate biasing during irradiation.
  • Analysis of EPAD transfer characteristics degradation under irradiation.
  • Development of a safe operation area function based on dose and control gate voltage.

Main Results:

  • Zero-biased EPADs exhibit the lowest fading and highest sensitivity up to 300 Gy.
  • Dynamic bias significantly enhances sensitivity and linear dependence compared to static bias.
  • A safe operation area function was determined to prevent transistor degradation.
  • Energy band diagrams explain the superior sensitivity of zero-biased configurations.

Conclusions:

  • EPADs are viable gamma radiation sensors, particularly in zero-biased configurations.
  • Dynamic biasing and understanding safe operating limits are crucial for effective EPAD-based radiation detection.