Examination of Impact of NBTIs on Commercial Power P-Channel VDMOS Transistors in Practical Applications

In this paper, the impact of negative bias temperature instabilities (NBTIs) on commercial power p-channel Vertical Double-Diffused MOS (VDMOS) transistors from the standpoint of practical applications was analyzed. The effects of NBTI are one of the main reliability concerns for this type of device, so it is necessary to investigate how these effects influence various applications. A series of experiments were carried out including negative bias temperature stressing, infra-red thermographic recording and circuit characterization, with the goal of evaluating the effects of negative bias temperature stressing on the self-heating of samples in load-driving circuits operating with higher currents and circuit performance of a CMOS inverter circuit containing the examined samples. The findings suggest that negative bias temperature stressing-induced threshold voltage shift directly affects increased self-heating in load-driving circuits and that it also directly affects transfer and dynamics characteristics in CMOS inverters.