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Hybrid integrated photonics using bulk acoustic resonators.

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This study introduces high-overtone bulk acoustic wave resonances (HBAR) for modulating silicon nitride photonic devices. This innovation enables high-speed modulation, overcoming previous limitations for applications in optical communications and computing.

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Area of Science:

  • Photonics and Waveguide Technology
  • Acousto-Optic Modulation
  • Integrated Optics

Background:

  • Silicon nitride (Si3N4) photonic devices offer low propagation loss and nonlinear frequency conversion capabilities.
  • A key challenge for Si3N4 photonics is the absence of the Pockels effect, hindering high-speed modulation.
  • High-overtone bulk acoustic wave resonances (HBAR) are widely used in communications and superconducting circuits.

Purpose of the Study:

  • To demonstrate microwave-frequency acousto-optic modulation in silicon nitride photonic integrated circuits.
  • To integrate HBAR technology onto a photonic chip for the first time.
  • To overcome the modulation limitations of Si3N4 waveguides.

Main Methods:

  • Excitation of high-overtone bulk acoustic wave resonances (HBAR) within a silicon nitride photonic stack.
  • Utilizing tight vertical acoustic confinement to enable modulation.
  • Demonstration of a Si3N4-based optical isolator using spatiotemporal modulation.

Main Results:

  • Successful realization of microwave-frequency acousto-optic modulation on a photonic integrated chip.
  • Achieved negligible crosstalk and preserved low optical loss due to vertical acoustic confinement.
  • Demonstrated a Si3N4 optical isolator with over 17 dB isolation.

Conclusions:

  • The hybrid HBAR nanophotonic platform effectively enables high-speed modulation in Si3N4 photonics.
  • This approach overcomes the lack of Pockels effect in Si3N4.
  • The platform has potential applications in topological photonics, opto-electronic oscillators, and microwave-to-optical conversion.