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TEM bright field imaging of thick specimens: nodes in Thon ring patterns
Willem Tichelaar1, Wim J H Hagen2, Tatiana E Gorelik3
1Corrected Electron Optical Systems GmbH, Englerstrasse 28, Heidelberg, 69126, Germany; Central Facility of Electron Microscopy, Ulm University, Albert-Einstein-Allee 11, Ulm, 89081, Germany.
Object thickness affects transmission electron microscope imaging, distorting 3D structure projections. This study shows object thickness can be determined from Thon ring pattern nodes in power spectra, aiding contrast transfer function correction.
Area of Science:
- Electron microscopy
- Materials science
- Image analysis
Background:
- Transmission electron microscopy (TEM) depth of field limits imaging of thick objects.
- Image projection deviates from true 3D structure when object thickness exceeds depth of field.
- This deviation is observable in the image's power spectrum.
Purpose of the Study:
- To experimentally demonstrate the effect of object thickness on TEM power spectra.
- To establish a method for determining object thickness from power spectrum features.
- To improve contrast transfer function (CTF) correction for thicker samples.
Main Methods:
- Experimentally imaged carbon foils of varying thicknesses at different acceleration voltages (40-300 kV).
- Determined foil thicknesses using electron tomography.
- Analyzed power spectra to observe Thon ring patterns and their modulation by object thickness.
Main Results:
- Observed a sinc function envelope attenuating Thon ring amplitudes in thick objects.
- Identified "nodes" (zero amplitude points) in the power spectrum.
- Demonstrated that node positions shift to lower spatial frequencies with increased thickness and decreased acceleration voltage.
- Confirmed that object thickness can be derived from node positions.
Conclusions:
- Thick object Thon ring patterns are a sum of power spectra from thin, independently scattering slices.
- Object thickness can be quantitatively determined from power spectrum node positions.
- This method aids in more reliable CTF correction for thicker samples and lower acceleration voltages in TEM.
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