Temperature dependence on bandgap of semiconductor photocatalysts

Light irradiation onto a semiconductor generates heat; however, its electronic structure under high temperature has not yet been well investigated. In this study, we have carefully examined the temperature dependence on the bandgap of simple metal oxides, which are well-known photocatalysts, i.e., TiO₂, CeO₂, Nb₂O₅, SnO₂ Ta₂O₅, WO₃, ZnO, and ZrO₂, using operando UV-visible spectroscopy under controlled temperature (from room temperature to 500 °C). Consequently, a linear decrease in bandgap was seen as a function of temperature with a different slope for each semiconductor. We found that the slope was dependent on the bonding distance between metal and oxygen. This finding is essential to develop a photocatalyst used under the condition involving photo-thermal effect.