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Josephson junction with variable thickness of the dielectric layer.
T Dobrowolski1, A Jarmoliński1
1Institute of Physics UP, Podchor ¸ ażych 2, 30-084 Cracow, Poland.
Physical Review. E
|June 25, 2020
Summary
The fluxon dynamics in Josephson junctions are analyzed with variable dielectric thickness. This thickness creates a potential barrier, influencing critical current behavior.
Area of Science:
- Condensed Matter Physics
- Superconductivity
- Quantum Electronics
Background:
- Josephson junctions are key components in superconducting electronics.
- Fluxon dynamics are crucial for understanding junction behavior.
- Dielectric layer properties significantly impact device performance.
Purpose of the Study:
- To investigate the influence of variable dielectric layer thickness on fluxon dynamics.
- To analyze the formation of potential barriers within the Josephson junction.
- To determine the relationship between critical bias current and dielectric thickness.
Main Methods:
- Analytical modeling of fluxon behavior.
- Numerical simulations of Josephson junction dynamics.
- Mathematical derivation of critical current dependencies.
Main Results:
- The variable dielectric thickness modifies the junction area, creating a potential barrier for the fluxon.
- An analytical and numerical relationship between critical bias current and dielectric thickness was established.
- Fluxon dynamics are shown to be sensitive to geometric modifications.
Conclusions:
- Dielectric layer thickness is a critical parameter for controlling fluxon dynamics in Josephson junctions.
- The potential barrier model accurately describes the observed behavior.
- This study provides insights for designing advanced superconducting devices.
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