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Accurate electron backscatter diffraction (EBSD) relies on precise calibration. This study calibrates EBSD diffraction geometry using a projective transformation model, improving orientation determination in polycrystalline materials.

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Area of Science:

  • Materials Science
  • Crystallography
  • Electron Microscopy

Background:

  • Precise orientation determination in polycrystalline materials is crucial for understanding material properties.
  • Electron backscatter diffraction (EBSD) in scanning electron microscopy (SEM) is a key technique for this purpose.
  • Consistent calibration of EBSD diffraction geometry is essential for accurate results.

Purpose of the Study:

  • To calibrate the variation of the projection center in EBSD measurements.
  • To implement a projective transformation model for SEM beam scan positions.
  • To quantify orientation errors resulting from different calibration models.

Main Methods:

  • Utilizing a projective transformation model to calibrate EBSD projection center variation.
  • Employing a full pattern matching approach for simulated and experimental Kikuchi patterns.
  • Determining individual projection center estimates on a subgrid of the EBSD map.
  • Fitting affine and projective transformations using least-squares methods.
  • Performing reference measurements on single-crystalline silicon.

Main Results:

  • Individual projection center estimates were determined across the EBSD map.
  • Affine and projective transformations were fitted to the estimated projection centers.
  • Orientation errors were quantified for different calibration models using silicon samples.

Conclusions:

  • The developed projective transformation model effectively calibrates EBSD projection center variation.
  • Accurate calibration of diffraction geometry is vital for precise orientation determination.
  • This method offers a pathway to reduce orientation errors in EBSD analysis.