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Updated: Dec 16, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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Analysis of a Schottky Barrier MOSFET for Synaptic Device Using Hot Carrier Injection

Taejin Jang1, Myung-Hyun Baek1, Suhyeon Kim1

  • 1Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea.

Journal of Nanoscience and Nanotechnology
|July 2, 2020
PubMed

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