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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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MOSFET01:16

MOSFET

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Characteristics of MOSFET01:17

Characteristics of MOSFET

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
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MOSFET Amplifiers01:17

MOSFET Amplifiers

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The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
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Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
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Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

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Double-Gate MoS2 Field-Effect Transistor with a Multilayer Graphene Floating Gate: A Versatile Device for Logic,

Michael A Rodder1, Sudhanva Vasishta1, Ananth Dodabalapur1

  • 1Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States.

ACS Applied Materials & Interfaces
|July 7, 2020
PubMed
Summary

This study presents a novel two-dimensional (2D) material device, a molybdenum disulfide (MoS2) field-effect transistor (FET), for advanced electronics. The versatile MoS2 FET demonstrates logic, memory, and synaptic functions, potentially augmenting silicon technology.

Keywords:
MoS2NAND flashdouble-gate FETfloating gatemultilayer graphenesynapse

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • Two-dimensional (2D) materials offer low-temperature processing advantages for electronic devices.
  • Existing silicon technology has limitations in achieving certain advanced functionalities like substrate body-bias in planar devices or vertical finFETs without body-bias.
  • There is a need for versatile electronic components that can complement or surpass silicon-based technologies.

Purpose of the Study:

  • To fabricate and characterize a novel double-gate molybdenum disulfide (MoS2) field-effect transistor (FET) integrated with hexagonal boron nitride (h-BN) gate dielectrics and a multi-layer graphene floating gate (FG).
  • To demonstrate the device's capability for logic, memory, and synaptic applications.
  • To investigate the impact of h-BN thickness on charge retention within the FG for memory applications.

Main Methods:

  • Fabrication of a double-gate MoS2 FET device incorporating h-BN gate dielectrics and a multi-layer graphene FG.
  • Characterization of the device's performance under various operating conditions.
  • Systematic investigation of different h-BN dielectric thicknesses to assess charge retention properties.

Main Results:

  • Demonstration of the MoS2 FET as a logic device with an adjustable threshold voltage (VT) controlled by charges stored in the FG.
  • Implementation of the device as a digital flash memory with enhanced reliability due to a lower pass-through voltage.
  • Successful operation as a synaptic device, achieving symmetric program/erase conductance changes by decoupling tunneling and gate dielectrics.

Conclusions:

  • The developed MoS2 FET device exhibits versatility for logic, memory, and synaptic functionalities.
  • The device's compatibility with back-end-of-line integration suggests its potential to augment existing silicon technology.
  • This 2D material-based device offers a promising pathway for next-generation electronic applications.