An artefact-resist optrode with internal shielding structure for low-noise neural modulation

Longchun Wang1, Chaofan Ge2,3, Minghao Wang4

  • 1National Key Laboratory of Science and Technology on Micro/Nano Fabrication Laboratory, Key Laboratory for Thin Film and Micro fabrication of the Ministry of Education, Collaborative Innovation Center of IFSA, Department of Micro/Nano-electronics, Shanghai Jiao Tong University, Shanghai, People's Republic of China.

Summary

This study introduces a novel low-noise optrode for optogenetics, significantly reducing signal artefacts. This advancement enables simultaneous high-quality neural recording and precise neuron stimulation for brain research.

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