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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
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Performance improvement of ultraviolet-A multiple quantum wells using a vertical oriented nanoporous GaN underlayer.
Xilin Su1,2, Yufeng Li1, Minyan Zhang1,2
1Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi'an Jiaotong University, Xi'an 710049 People's Republic of China.
Nanotechnology
|July 17, 2020
Summary
Researchers developed nanoporous gallium nitride (GaN) structures using electrochemical etching to enhance light output. This method significantly boosts photoluminescence intensity and narrows spectral width in ultraviolet-A multiple quantum wells (MQWs).
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- Gallium Nitride (GaN) based devices are crucial for optoelectronic applications.
- Improving light output efficiency and emission control in GaN devices remains a key challenge.
Purpose of the Study:
- To investigate the impact of well-aligned, lateral, and vertical nanoporous GaN on optical characteristics.
- To develop a method for enhancing light output and controlling emission angles in GaN-based light-emitting devices.
Main Methods:
- Fabrication of lateral and vertical oriented nanoporous GaN using electrochemical etching.
- Utilized a multiple quantum well (MQW) structure with V-defect and n-Al0.1Ga0.9N layer for uniform etching.
- Characterized optical properties via photoluminescence intensity and spectral width (Full Width at Half Maximum).
Main Results:
- Nanoporous GaN structures showed significant photoluminescence intensity enhancement (3.8-fold for lateral, 8.1-fold for vertical).
- Full Width at Half Maximum (FWHM) narrowed from 18.4 nm to 7.9 nm (lateral) and 2.8 nm (vertical).
- Vertical nanoporous MQW exhibited a rectangular far-field emission pattern with a 50° view angle at 85% intensity.
Conclusions:
- Electrochemical etching of GaN to create well-aligned nanopores is an effective method for improving device performance.
- Nanoporous structures offer a pathway to enhance light output and precisely control emission characteristics in GaN optoelectronics.
