Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on...

Area of Science:

• Materials Science
• Electronics Engineering
• Nanotechnology

Background:

• Paper offers a sustainable and flexible substrate for electronic systems.
• Two-dimensional materials like MoS2 are promising for advanced electronic applications.
• Ubiquitous electronics, including wearable devices and smart packaging, require novel fabrication methods.

Purpose of the Study:

• To fabricate high-performance field-effect transistors (FETs) using molybdenum disulfide (MoS2) on a paper substrate.
• To combine chemical vapor deposition (CVD) and inkjet-printing for efficient large-area fabrication.
• To demonstrate the potential of paper-based electronics for Internet-of-Things (IoT) applications.

Main Methods:

• Utilized a "channel array" approach combining CVD for MoS2 patterning and inkjet-printing for dielectric and contact deposition.
• Fabricated MoS2 field-effect transistors on paper.
• Integrated transistors into functional digital and analog circuits, including logic gates and current mirrors.

Main Results:

• Achieved high performance metrics for MoS2 FETs on paper, with average I_ON/I_OFF ratios of 8 × 10^3 (up to 5 × 10^4) and mobilities of 5.5 cm^2 V^-1 s^-1 (up to 26 cm^2 V^-1 s^-1).
• Successfully demonstrated fully functional integrated circuits, showcasing the viability of the fabrication method.
• Confirmed the potential for creating complex electronic systems on a sustainable paper platform.

Conclusions:

• The developed fabrication method enables high-performance MoS2 transistors and circuits on paper.
• This approach paves the way for environmentally friendly and cost-effective ubiquitous electronic systems.
• The technology holds significant promise for diverse IoT applications, from wearables to smart packaging.