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Heteronuclear single-quantum correlation spectroscopy (HSQC) is a 2D NMR technique that reveals one-bond correlations between hydrogen and a heteronucleus. The HSQC experiment is similar to the heteronuclear correlation experiment (HETCOR) but is more sensitive. In the HSQC spectrum, the proton chemical shift is plotted on the horizontal F2 axis, while the 13C chemical shift is plotted on the vertical F1 axis. The corresponding proton and 13C spectra are also shown. The HSQC contour plot does...
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Spectroscopic Properties of Si-nc in SiOx Films Using HFCVD.

Zaira Jocelyn Hernández Simón1, Jose Alberto Luna López1, Alvaro David Hernández de la Luz1

  • 1Centro de Investigaciones en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Col. San Manuel, Cd. Universitaria, Av. San Claudio y 14 Sur, Edificios IC5 y IC6, Puebla 72570, Mexico.

Nanomaterials (Basel, Switzerland)
|July 24, 2020
PubMed
Summary

Researchers developed non-stoichiometric silicon oxide (SiOx) films using hot filament chemical vapor deposition. These films exhibit silicon nanoclusters and strong photoluminescence, showing potential for optoelectronic applications.

Keywords:
Si-ncsSiOx filmsband gap engineeringellipsometric spectroscopyphotoluminescencespectroscopic characterizations

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Optoelectronics

Background:

  • Non-stoichiometric silicon oxide (SiOx) films are crucial for optoelectronic devices.
  • Developing efficient deposition methods for SiOx films is an ongoing research area.

Purpose of the Study:

  • To report on SiOx films deposited using a hot filament chemical vapor deposition (HFCVD) technique.
  • To investigate the characteristics and potential applications of these films in optoelectronics.

Main Methods:

  • Deposition of SiOx films using HFCVD with simple parameters and short deposition times.
  • Characterization of the deposited films using various spectroscopic techniques.

Main Results:

  • Formation of silicon nanoclusters (Si-nc) without thermal annealing.
  • Observation of strong photoluminescence (around 1.5 eV) after thermal annealing, attributed to small oxidized silicon grains or Si-nc.
  • Correlation identified between oxygen content, hydrogen presence, defect formation, band gap, and Urbach energies.

Conclusions:

  • The HFCVD method provides a simple and efficient route to produce SiOx films with desirable properties.
  • The observed photoluminescence and tunable band gap suggest potential for photonic device applications.
  • Understanding the correlation between material composition and defects is key for band gap engineering in SiOx.