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Bandgap Modulation of Glancing Angle Deposition Aided Ag Nanoparticles Covered TiO₂ Thin Film by High Temperature
Amitabha Nath1, Rahul Raman1, Vinit Kumar Yadav1
1Microelectronics and Nanoelectronics Laboratory, Department of Electronics and Communication Engineering, National Institute of Technology Agartala, Jirania 799046, India.
Abstract:
Glancing Angle Deposition (GLAD) technique has been used to fabricate the Ag nanoparticles (NPs) over TiO₂ thin film (TF) on the n-Si substrate. The deposited Ag NPs are in the size of 3-5 nm. Open-air annealing has been done at 500 °C and 600 °C for the n-Si/TiO₂ TF/Ag NP samples. High Resolution X-ray Diffraction (HRXRD) peaks were identified to calculate the crystalline size of the NPs and rutile phase of the annealed sample were exhibited. Morphological analysis has been done for the sample using Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive Spectroscopy (EDS) and Atomic Force Microscopy (AFM). The enhancement of plasmonic absorption and modulation in the bandgap for the annealed Ag NPs surrounded TiO₂ TF has been verified by UV-Vis Spectroscopy and the bandgap has been calculated using Tauc plot. An overall 2.5 fold and 3 fold enhancement has been observed in the UV region and visible region for n-Si/TiO₂ TF/Ag NP annealed at 500 °C and 600 °C samples as compared to the n-Si/TiO₂ TF/Ag NP as-deposited samples. The modulation of bandgap due to the sub-band transition and Localized Surface Plasmon Resonance (LSPR) effect of Ag NPs and relevant sub-band transition due to change in annealing temperature has been reported.
