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Published on: July 5, 2019
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Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe
Tian-Ran Wei1,2, Min Jin3, Yuecun Wang4
1State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Science (New York, N.Y.)
|August 1, 2020
Summary
Indium selenide (InSe) exhibits remarkable superplasticity, allowing significant deformation at room temperature. This discovery paves the way for novel, flexible inorganic electronics.
Area of Science:
- Materials Science
- Solid-State Physics
- Nanotechnology
Background:
- Inorganic semiconductors are crucial for electronics but typically brittle.
- Developing deformable inorganic materials is essential for next-generation flexible electronics.
Purpose of the Study:
- To report the superplastic deformability of indium selenide (InSe).
- To investigate the mechanisms behind InSe's exceptional plasticity.
- To propose a method for identifying other deformable semiconductors.
Main Methods:
- Experimental characterization of bulk single-crystalline InSe.
- Analysis of deformation mechanisms including interlayer gliding and dislocation slip.
- Theoretical modeling of interatomic interactions.
Main Results:
- Bulk single-crystalline InSe demonstrates superplastic deformability at room temperature, withstanding large compressions.
- InSe can be shaped into complex forms like a Möbius strip or origami.
- Plasticity is attributed to interlayer gliding and cross-layer slip, driven by Coulomb interactions and soft bonding.
Conclusions:
- Indium selenide is a highly deformable inorganic semiconductor with potential for flexible electronics.
- The identified deformation mechanisms offer insights into designing new flexible electronic materials.
- A new deformability indicator (Ξ) can help screen candidate semiconductors for advanced applications.
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