Co-sputtered Pr³⁺-doped Ga-Ge-Sb-Se active waveguides for mid-infrared operation

This work reports on the properties of luminescent waveguides based on quaternary Ga-Ge-Sb-Se amorphous thin films doped with praseodymium. The waveguides were fabricated via magnetron co-sputtering, followed by inductively coupled plasma reactive ion etching. The initial thin film thickness and optical properties were assessed and the spectroscopic properties of the waveguides were measured. The measurements show promising results-it is possible to obtain mid-infrared fluorescence at 2.5 and 4.5 µm by injecting near-infrared light at 1.5 µm as the pump beam. By comparing waveguides with various praseodymium concentrations, the optimal doping content for maximum fluorescence intensity was identified to be close to 4100 ppmw. Finally, correlation between the intensity of mid-infrared emission and the width/length of the waveguide is shown.