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Updated: Dec 12, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Resistive Switching of GaAs Oxide Nanostructures
Vadim Avilov1, Nikita Polupanov1, Roman Tominov1
1Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, 347922 Taganrog, Russia.
Abstract:
The paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxial structures of silicon doped gallium arsenide with an impurity concentration of 5 × 1017 cm-3. X-ray photoelectron spectroscopy measurements showed that GaAs oxide consists of oxide phases Ga2O3 and As2O3, and the thickness of the Ga2O3 layer is 2-3 times greater than the thickness of As2O3 area-i.e., the oxidized GaAs region consists mainly of Ga2O3. The experimental studies of the influence of ONS thickness on the resistive switching effect were obtained. An increase in the ONS thickness from 0.8 ± 0.3 to 7.6 ± 0.6 nm leads to an increase in the switching voltage Uset from 2.8 ± 0.3 to 6.8 ± 0.9 V. The results can be used in the development of technological processes for the manufacturing of nano-electronic elements, such as ReRAM, as well as a high-efficiency quantum dot laser.
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