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Simulation and Nonlinearity Optimization of a High-Pressure Sensor
Ting Li1,2, Haiping Shang1, Weibing Wang1
1Institute of Microelectronics of The Chinese Academy of Sciences, Beitucheng West Road, Beijing 100029, China.
Abstract:
A pressure sensor in the range of 0-120 MPa with a square diaphragm was designed and fabricated, which was isolated by the oil-filled package. The nonlinearity of the device without circuit compensation is better than 0.4%, and the accuracy is 0.43%. This sensor model was simulated by ANSYS software. Based on this model, we simulated the output voltage and nonlinearity when piezoresistors locations change. The simulation results showed that as the stress of the longitudinal resistor (RL) was increased compared to the transverse resistor (RT), the nonlinear error of the pressure sensor would first decrease to about 0 and then increase. The theoretical calculation and mathematical fitting were given to this phenomenon. Based on this discovery, a method for optimizing the nonlinearity of high-pressure sensors while ensuring the maximum sensitivity was proposed. In the simulation, the output of the optimized model had a significant improvement over the original model, and the nonlinear error significantly decreased from 0.106% to 0.0000713%.
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