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Mingxiao Li¹, Jingwei Ling¹, Yang He¹

¹Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY, 14627, USA.

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|August 19, 2020

Summary

Researchers developed compact, high-speed electro-optic modulators using thin-film lithium niobate (LN) on photonic crystal resonators. These energy-efficient devices achieve 11 Gb/s switching at 22 fJ, advancing photonic integrated circuits.

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Area of Science:

Photonics
Materials Science
Electrical Engineering

Background:

Photonic integrated circuits (PICs) demand miniaturized, high-speed, energy-efficient electro-optic components.
Thin-film lithium niobate (LN) is a promising platform for advanced PICs due to its electro-optic properties.

Purpose of the Study:

To develop miniaturized, high-speed, and energy-efficient electro-optic modulators on the thin-film lithium niobate platform.
To leverage photonic crystal nanobeam resonators for enhanced modulator performance.

Main Methods:

Fabrication of electro-optic modulators based on photonic crystal nanobeam resonators using thin-film lithium niobate.
Characterization of device performance, including tuning efficiency, modulation bandwidth, and electro-optic modal volume.
Demonstration of high-speed electro-optic switching and measurement of bit-switching energy.

Main Results:

Achieved significant tuning efficiency up to 1.98 GHz V⁻¹.
Demonstrated a broad modulation bandwidth of 17.5 GHz.
Reported a tiny electro-optic modal volume of 0.58 μm³.
Enabled electro-optic switching at 11 Gb/s with a low bit-switching energy of 22 fJ.

Conclusions:

The developed LN modulators represent a significant step towards miniaturizing functional components for PICs.
The energy-efficient and high-speed modulation capabilities pave the way for large-scale LN photonic integrated circuits.
These advancements are crucial for applications in data communication, microwave photonics, and quantum photonics.