Efficient Naphthalene Imide-Based Interface Engineering Materials for Enhancing Perovskite Photovoltaic Performance...

Area of Science:

• Materials Science
• Renewable Energy
• Photovoltaics

Background:

• Perovskite solar cells (PSCs) face challenges in surface charge recombination and poor interface contact, hindering development.
• Commonly used materials like PCBM exhibit high charge recombination and poor surface coverage.
• An effective interfacial engineering layer is needed for surface passivation, electron extraction, and improved interface contact.

Purpose of the Study:

• To develop a novel interface engineering material to overcome limitations in PSCs.
• To enhance perovskite performance through efficient surface passivation and improved interface contact.
• To investigate the potential of a spike energy level structure for reducing energy losses and increasing open-circuit voltage (Voc).

Main Methods:

• Development of a linear naphthalene imide dimer containing an indacenodithiophene unit (IDTT2NPI) as an interface engineering material.
• Introduction of a spike interface using IDTT2NPI on a methylammonium lead triiodide (MAPbI3) film.
• Experimental and theoretical calculations to investigate the mechanism of IDTT2NPI as an interface engineering layer.

Main Results:

• The IDTT2NPI interface engineering layer resulted in a high open-circuit voltage (Voc) of 1.12 V.
• The optimal power conversion efficiency (PCE) reached 20.2%.
• Efficiency enhancement was attributed to efficient surface passivation and improved interface contact provided by IDTT2NPI.

Conclusions:

• The developed IDTT2NPI material effectively addresses surface charge recombination and interface contact issues in PSCs.
• The spike interface structure contributes to reduced energy losses and increased Voc.
• Naphthalene imide-based materials show promise as interfacial layers for high-efficiency and stable PSCs.