Decelerated Hot Carrier Cooling in Graphene via Nondissipative Carrier Injection from MoS₂

One key to improve the performance of advanced optoelectronic devices and energy harvesting in graphene is to understand the predominant carrier scattering via optical phonons. Nevertheless, low light absorbance in graphene yields a limited photoexcited carrier density, hampering the hot carrier effect, which is strongly correlated to the hot optical phonon bottleneck effect as the energy-loss channel. Here, by integrating graphene with monolayer MoS₂ possessing stronger light absorbance, we demonstrate an efficient interfacial hot carrier transfer between graphene and MoS₂ in their heterostructure with a prolonged relaxation time using broadband transient differential transmittance spectroscopy. We observe that the carrier relaxation time of graphene in the heterostructure is 4 times slower than that of bare graphene. This is explained by nondissipative interlayer transfer from MoS₂ to graphene, which is attributed to the enhanced hot optical phonon bottleneck effect of graphene in the heterostructure by an increased photoexcited carrier population. A significant reduction of both amplitude and relaxation time in A- and B-excitons is another evidence of the interlayer transfer from MoS₂ to graphene. The nondissipative interlayer charge transfer from MoS₂ to graphene is confirmed by density functional calculations. This provides a different platform to further study the photoinduced hot carrier effect in graphene heterostructures for photothermoelectric detectors or hot carrier solar cells.