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Updated: Dec 11, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Improved High-Yield PMMA/Graphene Pressure Sensor and Sealed Gas Effect Analysis
Ying Liu1,2, Yong Zhang1,2, Xin Lin1,2
1College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China.
Abstract:
Graphene with atomic thickness possesses excellent mechanical and electrical properties, which hold great potential for high performance pressure sensing. The exposed electron of graphene is always cross-sensitive to any pollution absorbed or desorbed on the surface, from which the long-term stability of the graphene pressure sensor suffers a lot. This is one of the main obstacles towards graphene commercial applications. In this paper, we utilized polymethylmethacrylate (PMMA)/graphene heterostructure to isolate graphene from the ambient environment and enhance its strength simultaneously. PMMA/graphene pressure sensors, with the finite-depth cavity and the through-hole cavity separately, were made for comparative study. The through-hole device obtained a comparable sensitivity per unit area to the state of the art of the bare graphene pressure sensor, since there were no leaking cracks or defects. Both the sensitivity and stability of the through-hole sensor are better than those of the sensor with 285-nm-deep cavities, which is due to the sealed gas effect in the pressure cavity. A modified piezoresistive model was derived by considering the pressure change of the sealed gas in the pressure cavity. The calculated result of the new model is consistent with the experimental results. Our findings point out a promising route for performance optimization of graphene pressure sensors.
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