Electrical Conduction Characteristic of a 2D MXene Device with Cu/Cr₂C/TiN Structure Based on Density Functional...

Area of Science:

• Materials Science
• Condensed Matter Physics
• Computational Materials Science

Background:

• Conventional memristor devices often face limitations in switching speed, programming voltage, and durability.
• The development of novel materials with superior electronic properties is crucial for advancing next-generation electronic devices.

Purpose of the Study:

• To investigate the electronic structure and electrical conductive behavior of a Cu/Cr2C/TiN stack.
• To compare the performance of the Cu/Cr2C/TiN stack with conventional Ag/Ti3C2/Pt stacks.

Main Methods:

• Utilized a newly developed first-principle model based on density functional theory (DFT).
• Assessed electronic structure and electrical conductive properties.

Main Results:

• The Cu/Cr2C/TiN stack exhibits metal-like characteristics.
• Significantly larger electrical conduction coefficients (mobility, diffusivity, electrical conductivity) were observed compared to Ag/Ti3C2/Pt.
• Lower activation energy was identified as a key factor for enhanced performance.

Conclusions:

• The Cu/Cr2C/TiN stack offers superior performance over conventional Ti3C2 MXene-based memristors.
• This material enables faster switching speeds, lower programming voltage, and enhanced stability and durability.
• The findings suggest potential for advanced memristor applications.