Silicon dynistors with subnanosecond switching times.

Area of Science:

• Solid-state physics
• Electrical engineering
• Materials science

Background:

• Silicon dynistors offer unique nanosecond current pulse switching capabilities.
• Shock ionization is the key mechanism for triggering these high-voltage devices.

Purpose of the Study:

• To design optimized shock-ionized dynistors (SIDs) for reduced switching energy loss.
• To enhance power handling capabilities for nanosecond current pulses.

Main Methods:

• Design optimization of SIDs focusing on energy loss reduction.
• Investigation of the impact of increased operating voltage and semiconductor structure area.
• Development of series-connected SID switches for high-power applications.

Main Results:

• Achieved a twofold reduction in triggering generator power consumption using optimized SIDs.
• Demonstrated effective increase in switched power in the nanosecond range via higher operating voltage SIDs.
• Showcased effective reduction in energy loss by increasing semiconductor structure areas.
• Developed series-connected SIDs capable of switching >10 MW nanosecond pulses.

Conclusions:

• Optimized SIDs significantly reduce energy loss during nanosecond pulse switching.
• Higher operating voltage and larger semiconductor areas enhance SID performance.
• Series-connected SIDs enable high-power (>10 MW) nanosecond pulse switching applications.