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InGaAs/InP single-photon detectors with 60% detection efficiency at 1550 nm.

Yu-Qiang Fang1, Wei Chen2, Tian-Hong Ao2

  • 1Hefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China.

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Summary
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High-frequency gating Indium Gallium Arsenide/Indium Phosphide (InGaAs/InP) single-photon detectors achieve 60% photon detection efficiency at 1550 nm. This advancement significantly enhances near-infrared photon counting applications.

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Area of Science:

  • Optoelectronics
  • Photonics
  • Semiconductor Devices

Background:

  • Indium Gallium Arsenide/Indium Phosphide (InGaAs/InP) single-photon detectors (SPDs) are crucial for near-infrared photon counting.
  • Photon Detection Efficiency (PDE) is a key performance metric for SPDs, driving research and development.

Purpose of the Study:

  • To implement high-frequency gating InGaAs/InP SPDs with enhanced Photon Detection Efficiency (PDE).
  • To optimize device structure and readout circuitry for improved SPD performance.

Main Methods:

  • Optimized the InGaAs/InP single-photon avalanche diode structure with a dielectric-metal reflection layer to boost photon absorption.
  • Developed a monolithic readout circuit for weak avalanche extraction, minimizing parasitic capacitance to suppress afterpulsing.

Main Results:

  • Achieved a maximum PDE of 60% at 1550 nm with a dark count rate (DCR) of 340 kcps using 1.25 GHz sine wave gating.
  • Demonstrated a practical PDE of approximately 40% with a DCR of 3 kcps and an afterpulse probability of 5.5%.

Conclusions:

  • The developed InGaAs/InP SPDs show significantly improved performance for near-infrared applications.
  • The optimized design and readout circuitry effectively enhance PDE while managing DCR and afterpulsing.