Related Experiment Video
Updated: Dec 10, 2025

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
Published on: August 15, 2014
Design, Analysis and Simulation of a MEMS-Based Gyroscope with Differential Tunneling Magnetoresistance Sensing
Cheng Li1,2, Bo Yang1,2, Xin Guo1,2
1School of Instrument Science and Engineering, Southeast University, Nanjing 210096, China.
Abstract:
The design, analysis, and simulation of a new Micro-electromechanical System (MEMS) gyroscope based on differential tunneling magnetoresistance sensing are presented in this paper. The device is driven by electrostatic force, whereas the Coriolis displacements are transferred to intensity variations of magnetic fields, further detected by the Tunneling Magnetoresistance units. The magnetic fields are generated by a pair of two-layer planar multi-turn copper coils that are coated on the backs of the inner masses. Together with the dual-mass structure of proposed tuning fork gyroscope, a two-stage differential detection is formed, thereby enabling rejection of mechanical and magnetic common-mode errors concurrently. The overall conception is described followed by detailed analyses of proposed micro-gyroscope and rectangle coil. Subsequently, the FEM simulations are implemented to determine the mechanical and magnetic characteristics of the device separately. The results demonstrate that the micro-gyroscope has a mechanical sensitivity of 1.754 nm/°/s, and the micro-coil has a maximum sensitivity of 41.38 mOe/µm. When the detection height of Tunneling Magnetoresistance unit is set as 60 µm, the proposed device exhibits a voltage-angular velocity sensitivity of 0.131 mV/°/s with a noise floor of 7.713 × 10-6°/s/Hz in the absence of any external amplification.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

