Flexible full two-dimensional memristive synapses of graphene/WSe2-O/graphene
Related Experiment Video
Updated: Oct 23, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Hui-Kai He1, Fan-Fan Yang1, Rui Yang1
1State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China. yangrui@hust.edu.cn.
Abstract:
van der Waals heterostructures realized by stacking different two-dimensional materials offer the possibility to design new devices with atomic-level precision. The realization of memristive synapses based on full two-dimensional materials provides an avenue for developing neuromorphic computing systems with excellent mechanical flexibility in future. Herein, we first develop the flexible full two-dimensional memristive synapse of graphene/WSe2-xOy/graphene exhibiting stable volatile resistive switching. The oxidation of WSe2 through O2 plasma treatment plays a key role in improving the memristive performance of the devices. And the switching behavior is associated with the migration of oxygen vacancies at the graphene/WSe2-xOy interface. Versatile synaptic functions have been realized, including short-term plasticity, long-term plasticity, the transition from short-term plasticity to long-term plasticity and high-pass temporal filtering, with ultralow energy consumption of ∼16.1 pJ per spike. The flexible full two-dimensional devices fabricated on flexible polyimide substrate show excellent mechanical flexibility, including a good endurance against repeatable bending of 1000 times and a bending strain of 2.5%.
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Types of Reversible Electrodes

