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Lock-in Ultrafast Electron Microscopy Simultaneously Visualizes Carrier Recombination and Interface-Mediated

Mathijs W H Garming¹, Maarten Bolhuis², Sonia Conesa-Boj²

¹Department of Imaging Physics, Delft University of Technology, 2628 CN Delft, The Netherlands.

The Journal of Physical Chemistry Letters

|September 10, 2020

Summary

New lock-in ultrafast scanning electron microscopy (USEM) visualizes both fast bulk recombination and slow surface trapping simultaneously. This technique reveals how surface termination impacts carrier dynamics in semiconductors, crucial for device efficiency.

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Area of Science:

* Surface science
* Materials science
* Ultrafast electron microscopy

Background:

* Visualizing charge carrier dynamics at interfaces and surfaces is challenging due to resolution limits and disparate timescales of bulk and surface phenomena.
* Ultrafast scanning electron microscopy (USEM) overcomes optical diffraction limits but struggles to distinguish surface trapping from ultrafast carrier dynamics in a single experiment.
* Understanding these competing processes is vital for optimizing semiconductor device performance.

Purpose of the Study:

* To develop a novel measurement scheme capable of simultaneously visualizing fast bulk recombination and slow surface trapping dynamics.
* To investigate the influence of surface termination on ultrafast carrier behavior in Gallium Arsenide (GaAs).
* To quantify the impact of trapping-induced surface potentials on carrier dynamics.

Main Methods:

* Development and application of lock-in ultrafast scanning electron microscopy (USEM).
* Utilizing a laser pump electron probe scheme for high-resolution imaging.
* Employing secondary electron particle tracing calculations for validation.

Main Results:

* Lock-in USEM successfully visualized both fast bulk recombination and slow trapping processes concurrently.
* Surface termination (Ga vs. As) on GaAs significantly altered ultrafast carrier dynamics.
* Observed differences were attributed to trapping-induced surface voltages of 100-200 mV, confirmed by simulations.

Conclusions:

* The developed lock-in USEM technique enables simultaneous visualization of competing carrier dynamics at surfaces and in the bulk.
* Surface termination plays a critical role in modulating carrier transport and trapping in semiconductors.
* This method offers new avenues for studying carrier transport in advanced semiconductor materials, addressing efficiency bottlenecks caused by carrier trapping.