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Updated: Dec 9, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Control of the 3-Fold Symmetric Shape of Group III-Nitride Quantum Dots: Suppression of Fine-Structure Splitting
Hwan-Seop Yeo1, Kwanjae Lee1, Jong-Hoi Cho1
1Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea.
Abstract:
Controlling the in-plane symmetry of wide-bandgap semiconductor quantum dots (QDs) is essential for room temperature quantum photonic applications using polarization entangled photon pairs. Herein, we report the formation of 3-fold symmetric group III-nitride QDs at the apex of a triangular pyramid via a self-limited growth mechanism. We employed the in-plane rotational symmetry of the c-plane of a Wurtzite crystal and the large built-in piezoelectric field to reduce fine-structure splitting. The QDs exhibit emission that is distinguishable from that of sidewall quantum wells, and the biexciton-exciton cascade possesses a single-photon nature. We observed the relatively low optical polarization anisotropy and small fine structure splitting under the measurement limit (270 μeV) with the 3-fold symmetric QD. In contrast with current strategies that consider group III-nitride QDs as strongly polarized single-photon emitters, our approach for controlling the QD symmetry provides a new perspective on such QDs, as polarization-entangled photon pairs.
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