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Updated: Dec 9, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Uniaxial and fourfold basal anisotropy in GdRh2Si2

D Ehlers1, K Kliemt, C Krellner

  • 1Max-Planck-Institut für Chemische Physik fester Stoffe, 01187 Dresden, Germany. Experimentalphysik V, Zentrum für elektronische Korrelationen und Magnetismus, Universität Augsburg, 86135 Augsburg, Germany.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|September 11, 2020
PubMed

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