Emergent Ferroelectricity in Otherwise Nonferroelectric Oxides by Oxygen Vacancy Design at Heterointerfaces

Ri He1,2,3, Jun Liang Lin4,5, Qing Liu1

  • 1Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.

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