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Related Experiment Video

Updated: Dec 8, 2025

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

Frequency Mixing with HfO₂-Based Ferroelectric Transistors.

Halid Mulaosmanovic¹, Stefan Dünkel², Martin Trentzsch²

¹NaMLab gGmbH, 01187 Dresden, Germany.

ACS Applied Materials & Interfaces

|September 17, 2020

Summary

Ferroelectric hafnium oxide field-effect transistors (FeFETs) achieve high-efficiency second harmonic generation and frequency mixing. Tuning material properties enhances performance, enabling electrical control over spectral components for radiofrequency applications.

Keywords:

ferroelectric field-effect transistor (FeFET)ferroelectric hafnium oxide frequency mixing radiofrequency second harmonic generation

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Area of Science:

Radiofrequency electronics
Solid-state physics
Materials science

Background:

Second harmonic generation (SHG) and frequency mixing are crucial for radiofrequency (RF) applications.
Ferroelectric field-effect transistors (FeFETs) utilizing hafnium oxide (HfO2) exhibit symmetric transfer curves, showing potential for SHG.
Optimizing FeFETs for RF signal processing requires understanding the influence of material properties on device performance.

Purpose of the Study:

To investigate the impact of ferroelectric layer thickness and silicon substrate doping on FeFET symmetry and SHG performance.
To demonstrate frequency mixing (sum and difference generation) using a single FeFET.
To explore the electrical control of spectral components in RF signals via ferroelectric switching.

Main Methods:

Fabrication of FeFETs with varying HfO2 thickness and silicon doping levels.
Characterization of device symmetry and second harmonic generation (SHG) efficiency.
Experimental demonstration of sum and difference frequency generation using the FeFETs.

Main Results:

FeFET symmetry was found to be highly sensitive to ferroelectric thickness and substrate doping.
SHG conversion gain and spectral purity were significantly improved (up to 96%) through precise tuning.
Single FeFETs successfully generated both sum and difference frequencies, attributed to strong quadratic nonlinearities.

Conclusions:

HfO2-based FeFETs offer a promising platform for efficient SHG and frequency mixing in RF applications.
Precise control over material properties and ferroelectric switching enables enhanced device performance.
This work paves the way for novel, electrically controlled frequency manipulation using simple ferroelectric devices.